Integrated circuit with complementary junction-isolated bipolar transistors

ABSTRACT

A process for making an integrated-circuit (IC) chip with junction-isolated complementary bipolar transistors, and a novel chip made by such a process. P-type dopant is implanted and diffused in an N-type substrate to form a sub-collector for a pnp transistor and also is implanted and diffused in the substrate to form a P-well for the sub-collector of an npn transistor. N-type material is then implanted and diffused into the P-well to form the npn sub-collector, and also is implanted in the substrate to form part of an isolation wall for the pnp transistor. A P-type epitaxial (epi) layer is grown over the N-type substrate. N-type material is implanted and diffused in the epi layer to complete the isolation wall for the pnp transistor, and to form the collector for the npn transistor. P-type and N-type material is implanted and diffused in the P-type epi layer to form the bases and emitters for the npn and pnp transistors.

This application is a continuation of Ser. No. 788,883 as filed on Nov. 7, 1991, now abandoned, which is a division of Ser. No. 430,810 as filed on Nov. 1, 1989, now U.S. Pat. No. 5,065,214 which is a division of Ser. No. 190,499 as filed on May 5, 1988, now U.S. Pat. No. 4,969,823 which is a continuation of application Ser. No. 912,771 originally filed Sep. 26, 1986, now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to monolithic integrated circuit (IC) devices. More particularly, this invention relates to improved IC devices having complementary junction-isolated bipolar transistors.

2. Description of the Prior Art

It has for many years been known to provide integrated circuits (ICs) having junction-isolated complementary transistors, i.e. both npn and pnp transistors. Circuits employing complementary transistors have important advantages, such as relatively low power consumption when used in push-pull configurations (where one transistor is off while the other is on). Advantageously, complementary ICs employ vertical npn and pnp structures which offer performance benefits. Typically, complementary ICs comprise a P-type substrate having an N-type epitaxial layer.

Known complementary IC devices have not been entirely satisfactory, particularly with respect to performance capabilities when used as amplifiers. Various proposals have been made from time to time in an effort to improve such devices, such as the use of more than one epitaxial layer, and other variations of the basic semiconductive structure. Nonetheless, modern day complementary junction-isolated ICs suffer still from important disabilities, and circuit designers have been seeking improved characteristics to permit them to use complementary ICs in more demanding applications.

One of the problems with presently known complementary ICs is that the relative performance capabilities of the two transistor types (npn and pnp) are not balanced. In one sense, this problem may be considered an inherent difficulty, since npn transistors are inherently better than pnp transistors. That is, the mobility of electrons, in npn transistors, is about 2.5 times higher than the mobility of holes, in pnp transistors. Nevertheless, achieving improved balance between the performance of npn and pnp transistors in a complementary IC (sometimes referred to as achieving improved "complementarity") can be very helpful to circuit designers in developing high-performance IC products. Indeed, some degradation of npn performance can be considered an acceptable trade-off for enhanced pnp performance, provided that both types of transistors have performance characteristics of suitably high level.

One characteristic of special importance to some circuit designers is the figure of merit β·V_(A). This figure represents the product of transistor current gain ("β"- equal to Ic/Ib) and "Early Voltage" ("V_(A) " - an extrapolated voltage intercept on a set of I-V curves). In conventional prior art complementary IC devices, the product β·V_(A) typically may be markedly different for the two different types of transistors. For many kinds of circuits, it is highly desirable that the two transistor types have more nearly equal β·V_(A) product. However, the product β·V_(A) should nevertheless be quite high for both types of transistors.

SUMMARY OF THE INVENTION

It has been determined that the Early Voltage V_(A) is approximately proportional to N_(B) /N_(C), where N_(B) is the doping concentration of the transistor base and N_(C) is the doping concentration of the transistor collector. V_(A) thus can be increased by increasing N_(B), or decreasing N_(C). The current gain β of a transistor is inversely proportional to Q_(B), which is related to the concentration of dopant in the transistor base.

In a preferred embodiment of the invention, there is provided an improved monolithic integrated circuit with complementary junction-isolated bipolar transistors comprising an N-type substrate with a single epitaxial layer of P-type material. In a sequence of steps, the substrate is implanted with P-type and N-type dopant which is subsequently diffused (driven-in). After epitaxy is grown over the substrate, additional P-type and N-type material is implanted and diffused into the epitaxial layer, as will be described hereinbelow in detail. The end result is a complementary IC having importantly advantageous characteristics, especially high β·V_(A) product for both types of transistors, and also excellent gain-bandwidth product.

In a complementary bipolar process, either the npn or the pnp transistor can have a diffused collector, i.e. a collector formed by diffusing one type of dopant (P or N) into a region which initially is of the other type. Such a diffused collector would be more heavily doped than the non-diffused collector. A higher Early Voltage for the pnp transistor may be obtained by having its collector more lightly doped than the collector of the npn transistor, thereby effecting better balance between the different type transistors. This is an important gain as a pnp has 3-5 times less base doping than an npn having the same beta, and is therefore at a 3-5 times disadvantage in Early Voltage. In accordance with one important aspect of the present invention, this result is achieved by forming the collector of the pnp transistor from a P-type epitaxial layer. Because this epitaxial layer need not be diffused (compensated) to P-type, it is more lightly doped than the collector of the npn transistor, and thus provides the desired enhancement of the pnp characteristics.

Other objects, aspects and advantages of the invention will in part be pointed out in, and in part apparent from, the following detailed description of a preferred embodiment of the invention, considered together with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 through 7 show dopant diffusion patterns in sequential views of a cross-section of an N-type substrate and a P-type epitaxial layer. P-type material is shown stippled. Interrupted lines are used in the drawings as a convention to indicate the merging of regions of the same conductivity type.

DETAILED DESCRIPTION OF A PREFERRED EMBODIMENT

Referring now to FIG. 1, there is shown in section a portion 10 of a silicon substrate having N-type dopant, e.g. with a concentration of about 10¹⁵ atoms/cm³. Starting with this substrate, the first principal step in the new complementary-bipolar (CB) process is to ion-implant a region 12 with boron to serve ultimately as a sub-collector for a pnp transistor to be formed. This implant (and others referred to hereinafter) is made in known fashion, as by opening an oxide layer to establish a window (e.g. rectangular in plan view) for the implant. The boron dose may be about 2.5×10¹⁵ atoms/cm², formed with an implant energy of about 100 KeV. The implant 12 is thereafter driven-in (i.e. diffused down into the substrate) at a temperature of about 1250° C. for a time period of about 60 minutes.

Referring now to FIG. 2, a second boron implant is made in the region indicated at 14 in the substrate, offset laterally from the first implant region 12. This implant is to serve ultimately as a P-well to isolate the to-be-formed sub-collector of an npn transistor. The dose of the implant in the region 14 may be about 8×10¹³ atoms/cm.², made at an implant energy of about 100 KeV. This second implant is driven-in at a temperature of about 1250° C., for a time period of about 30 minutes.

Referring now to FIG. 3, N-type implants next are made in the region indicated at 16 and 18. Implant region 16 is to develop part of an isolation wall surrounding the pnp transistor when it is completed, and may for example define a closed rectangular configuration, as seen in plan view, surrounding the diffused implant region 12. The other N-type implant region 18 is formed within the previously made diffused P-type implant 14, and also may have a rectangular configuration. Both N-type implants may be phosphorous having a dose of about 10¹⁵ atoms/cm.² implanted with an energy of about 100 KeV. These N-type implants are driven-in at a temperature of about 1250° C. for a time period of 30 minutes, so that they diffuse down into the substrate 10.

The next principal step in the process is to grow P-type epitaxy to form a layer 20 over the N-type substrate 10, as shown in FIG. 4. This epitaxial layer may for example be 15.5 microns thick, with boron at a concentration of about 10¹⁵ atoms/cm³.

Referring now to FIG. 5, phosphorous (N-type) implants are made in the regions indicated at 22 and 24 in the epitaxial layer 20. These implants may have a dose of about 2.3×10¹² atoms/cm.², at an implant energy of 150 KeV.

The implant region 22 is immediately above the N-type implant region 16 previously formed in the substrate 10 (see FIG. 3). The other N-type implant region 24 is directly over the other N-type region 18 previously formed in the substrate 10 (FIG. 3). The implants 22 and 24 are driven-in at a temperature of about 1250° C. for a time period of about 250 minutes, and diffuse downwardly into the epitaxial layer. While this downward diffusion is taking place, the previous implants 16 and 18 diffuse upwardly into the epitaxial layer, merging with the diffused implants 22 and 24 in central regions indicated by the interrupted cross-over lines 26 and 28. The merged N diffusions 16 and 22 complete the isolation wall around the region for the pnp transistor. The merged N diffusions 18 and 24 define the collector region for the npn transistor being formed.

As described above, during drive-in the substrate implants 16 and 18 diffuse upwardly in the processing illustrated in FIG. 5, while the epitaxial layer implants 22 and 24 diffuse downwardly during that processing. Thus, implants such as made in regions 16 and 18 often are referred to as "up" regions, while implants such as made in regions 22 and 24 often are referred to as "down" regions.

During this drive-in step, the substrate implants in regions 12, 14, 16 and 18 also diffuse downwardly, deeper into the substrate 10, as indicated in FIG. 5.

Turning now to FIG. 6, implants are next made into regions indicated at 30, 32, 34, 36 and 38 of the epitaxial layer 20. The implant at region 30 is of P-type material (e.g. boron) to serve as the base for the npn transistor. N-type material (e.g. arsenic) is implanted in region 32 within the P-type npn base region 30, to serve as the emitter of the npn transistor. Another N-type implant (e.g. phosphorus) is made in a region indicated at 34 to serve as the base for the pnp transistor.

The boron implant at region 30 may have a dose of 3×10¹⁴ atoms/cm.², implanted with an energy of 100 KeV. The arsenic implant at region 32 may have a dose of 8×10¹⁵ atoms/cm.², with an implant energy of 100 KeV. The phosphorus implant at region 34 may have a dose of 2.0×10¹⁴ atoms/cm.², with an implant energy of 100 KeV.

Implants corresponding to the npn emitter implant in region 32 are made simultaneously in the regions indicated at 36 and 38. The first of these emitter implants in region 36 serves as a "base contact diffusion" to enhance the contact-forming properties within the pnp base region 34. The other emitter implant in region 38 serves as a collector contact diffusion for the npn collector.

The implants in regions 30-38 then are driven in at a temperature of about 1100° C. for a time period of about 120 minutes.

Referring now to FIG. 7, boron next is implanted in the region indicated at 40 to form the emitter for the pnp transistor. This implant may be at a dose of 6.5×10¹⁵ atoms/cm.², with an implant energy of 100 KeV. Corresponding implants are made in the regions indicated at 42 and 44 to enhance the contact-making properties for the pnp collector and the npn base. The boron implants are then driven-in at a temperature of about 1000° C. for a time period of about 60 minutes to complete formation of the basic complementary IC structure in accordance with the invention.

Further conventional processing will of course be necessary to complete fabrication of the final product, including formation of other circuit elements such as resistors, formation of contacts and metallization as required. Novel devices manufactured by the new process described above have superior characteristics for widely different applications.

Although a specific preferred embodiment of the inventive IC structure and processing thereof have been described above in detail, it is to be understood that this is exemplary only, and not to be interpreted as limiting. Those skilled in this art may make many variations of the disclosed techniques and arrangements to suit particular applications without departing from the scope of this invention. For example, in many instances the sequences of procedural steps set forth above can be altered while still carrying out the basic concepts of the invention. Predeposit diffusions may be substituted for the implantation steps in many cases. Also, changes in processing conditions such as drive-in temperatures and time periods, can be made in accordance with known technology. Still other changes can be made as appropriate to meet different requirements. 

What is claimed is:
 1. An integrated circuit with complementary bipolar transistors comprising:a semiconductor substrate; and a P-type epitaxial layer comprising additional semiconductor material over said substrate and at least substantially free of N-type dopant, said epitaxial layer forming with said substrate a composite structure; said substrate and epitaxial layer being formed with: a pnp transistor comprising:a P-type collector formed at least partly of the P-type material of said P-type epitaxial layer; an N-type base formed in said epitaxial layer; and a P-type emitter formed in said epitaxial layer; an npn transistor comprising:an N-type collector formed in said epitaxial layer and in said substrate; a P-type well in said N-type substrate to isolate said N-type collector, said P-type well being contiguous with said P-type epitaxial layer; a P-type base formed in said epitaxial layer; an N-type emitter formed in said epitaxial layer; and isolating means to isolate said pnp and npn transistors.
 2. An integrated circuit with complementary bipolar transistors comprising:a semiconductor substrate; and a P-type epitaxial layer comprising additional semiconductor material over said substrate to form with said substrate a composite structure; said substrate and epitaxial layer being formed with:(1) a pnp transistor comprising:a P-type collector formed at least partly of the P-type material of said epitaxial layer, said P-type material being at least substantially free of N-type dopant; an N-type base formed by N-type material incorporated in said epitaxial layer; and a P-type emitter formed in said epitaxial layer; (2) an npn transistor comprising:an N-type collector formed at least partly by N-type material incorporated in said P-type epitaxial layer; a P-type base formed by P-type material incorporated in N-type material surrounded by the material of said P-type epitaxial layer; and isolation means formed in said epitaxial layer to isolate said pnp and npn transistors.
 3. An integrated circuit with complementary pnp and npn bipolar transistors comprising:a substrate of semiconductive material; epi layer means comprising at least one epi layer of P-type semiconductor material over said substrate and arranged to form with said substrate a composite structure; N-type material in said P-type epi layer and surrounding a portion of said P-type semiconductive material, said surrounded portion serving as at least a part of a collector region for said pnp transistor and being at least substantially free of N-type dopant; a P-type emitter for said pnp transistor formed of P-type material in said composite structure; an N-type collector for the npn transistor formed by N-type material in said composite structure; an N-type emitter for the npn transistor formed by N-type material in said composite structure; and a base region for at least one of said complementary transistors formed at least in part by an impurity in said epi layer means.
 4. An integrated circuit with complementary pnp and npn bipolar transistors comprising:a substrate of semiconductive material; epi layer means comprising at least one epi layer of P-type semiconductive material over said substrate and arranged to form with said substrate a composite structure; N-type material in said P-type epi layer and surrounding a portion of said P-type semiconductive material, said surrounded portion serving as at least a part of a collector region for said pnp transistor; a P-type emitter for said pnp transistor formed of P-type material in said composite structure; an N-type collector for the npn transistor formed by N-type material in said composite structure; N doping of said N-type collector being greater than P-doping of said surrounded portion of P-type semi-conductive material serving as part of the collector region of said pnp transistor; an N-type emitter for the npn transistor formed by N-type material in said composite structure; and a base region for at least one of said complementary transistors formed at least in part by an impurity in said composite structure. 